The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Dec. 09, 1996
Northern Telecom Limited, Montreal, CA;
Abstract
A method is provided for forming a crystalline perovskite phase of a ferroelectric dielectric material by a process of depositing a layer of amorphous ferroelectric precursor material and then annealing in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate, with low film stress, high dielectric constant and low leakage current. The reduced thermal budget allows for increase flexibility in integration of ferroelectric materials, e.g. after a step of deposition of low melting point metal or metal alloy.