The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 1998

Filed:

Mar. 04, 1996
Applicant:
Inventors:

George N Maracas, Phoenix, AZ (US);

Lawrence N Dworsky, Scottsdale, AZ (US);

Herbert Goronkin, Tempe, AZ (US);

Kathleen Tobin, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
445 24 ; 216 13 ; 216 17 ;
Abstract

A process for manufacturing of a field emission device (100, 200) including the steps of i) providing a substrate (101, 201), ii) forming a conductive row (106, 206), ii) forming a dielectric layer (102, 202), iv) forming a resist layer (116, 216), v) forming a self-assembled monolayer (112, 212) of a self-assembled monolayer-forming molecular species on the resist layer (116, 216) so that the self-assembled monolayer (112, 212) defines an etch pattern for an emitter well (107, 207), vi) etching the resist layer (116, 216), vii) etching the dielectric layer ((102, 202), viii) forming conductive column (103, 203), and ix) forming the electron-emitter structure (105, 208) within the emitter well (107, 207).


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