The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Apr. 14, 1996
Alfred W Morse, Ellicott City, MD (US);
Paul M Esker, Millersville, MD (US);
Robin E Hamilton, Millersville, MD (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
An RF power amplifier module utilizing a plurality of silicon carbide transistor power amplifier circuits, each including a transistor assembly having multiple cells, respectively providing power amplification of an input signal. In a preferred embodiment of the invention, four mutually staggered silicon carbide transistor assemblies, each containing multiple transistor cells, are operated in parallel while being arranged in close proximity on a common substrate. Each silicon carbide amplifier circuit assembly is commonly driven by a fifth silicon carbide amplifier circuit. The outputs of the parallely driven silicon carbide transistor power amplifier circuits are combined so as to provide a single composite RF output signal which may be in the order of 1000 watts or more when operated at a frequency of, for example, 600 MHz.