The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Jun. 17, 1996
Applicant:
Inventor:
Ritsuko Gotoda, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257344 ; 257408 ;
Abstract
A semiconductor device has an electric field intensity profile which can suppress generation of hot carriers near a drain region. Under the conditions maximizing a substrate current, a formula (1) of E2<E1/2 is satisfied by a peak value (E1) in an electric field intensity profile in a channel length direction at a depth from the main surface of the semiconductor substrate allowing passage of carriers and an electric field intensity (E2) in the electric field intensity profile at an end of the gate electrode near the drain region. Generation of hot carriers near the drain can be suppressed more effectively than the case not satisfying the above conditions.