The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Sep. 21, 1995
Atsushi Tsuboi, Tokyo, JP;
NEC Corporation, , JP;
Abstract
An underlying interconnection is formed on a semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate and the underlying interconnection. A metal film is deposited on the interlayer insulating film, and is patterned in an interconnection pattern, and a first opening for connecting the metal film to the underlying interconnection is patterned, thereby forming an overlying interconnection. Then, a protection film is formed so as to cover the surfaces of the overlying interconnection and the interlayer insulating film. Next, a photoresist film is formed on the protection film, and is patterned to provide a second opening larger than the first opening in the protection film above the first opening and provide a third opening in a pad-portion forming region on the overlying interconnection. At the same time, with the overlying interconnection as a mask, the interlayer insulating film is selectively etched out to form a through hole. Then, a tungsten film is deposited in the through hole and on the protection film, and the unnecessary portion of the tungsten film is etched back to form a tungsten plug in the through hole which electrically connects the underlying interconnection to the overlying interconnection.