The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Feb. 21, 1996
Tatsuya Ishida, Aichi-ken, JP;
Akihiko Watanabe, Aichi-ken, JP;
Kabushiki Kaisha Tokai Rika Denki Seisakusho, Aichi-ken, JP;
Abstract
A method of manufacturing an accelerometer sensor having a mass portion is disclosed. A P-type silicon area is formed in an upper area of a P-type silicon substrate by means of impurity doping. An N-type silicon layer is formed on the silicon substrate through vapor phase epitaxy. A recess defining the mass portion is formed in the silicon substrate through an etching process. A current is supplied to the silicon substrate in an electrolytic solution, such as HF aq., while the substrate is connected to an anode of a power supply. The P-type silicon area is then converted to a porous silicon area. The porous silicon area is subjected to a wet etching to be hollowed, thus obtaining a mass portion of a desired shape.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile