The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1998
Filed:
Nov. 21, 1995
Hieu Van Tran, San Jose, CA (US);
Trevor Blyth, Milpitas, CA (US);
Richard T Simko, Los Altos Hills, CA (US);
Information Storage Devices, Inc., San Jose, CA (US);
Abstract
The present invention discloses methods and apparatus for implementing a clocked high voltage switch involving MOS devices. The switching is from a high voltage source typically at 21V to ground. An intermediate voltage source typically at 11V is introduced for reducing the gated breakdown voltage requirement to approximately 10V. This reduced gated breakdown voltage requirement is easily met by special layout methods applied to various transistors in the circuit. The basic layout methods include the terminating of the field implant region near the N+P junction to expose the N+ diffusion over the P substrate to increase the junction breakdown and the gated diode breakdown, and the use of short channel length to reduce the threshold voltage.