The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 1998

Filed:

Mar. 17, 1995
Applicant:
Inventors:

Toshihiko Kosugi, Kanagawa, JP;

Hiromu Ishii, Kanagawa, JP;

Yoshinobu Arita, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438719 ; 438694 ; 438710 ; 438475 ; 427535 ; 427539 ;
Abstract

According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.


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