The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1998
Filed:
Sep. 14, 1995
Applicant:
Inventors:
Salvatore Ugo Campisano, Catania, IT;
Vito Raineri, Mascalucia, IT;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438164 ; 438438 ; 438407 ; 438766 ;
Abstract
A method and apparatus for forming buried oxide layers within silicon wafers comprising several steps. Recesses are formed in a silicon wafer. Light ions are implanted in the silicon wafer at a depth that is smaller than the depth of the recesses to form bubbles of the light ions in the silicon wafer. The light ions are evaporated from the silicon wafer to leave cavities in the place of the bubbles. The cavities are oxidized through the recesses to form a buried layer of silicon oxide.