The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1998
Filed:
Mar. 14, 1996
Douglas R Robello, Rochester, NY (US);
Joseph F Revelli, Rochester, NY (US);
Jeffrey I Hirsh, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
In a method for forming lenslets which collect light and focus it onto photosensitive elements of an electronic imager includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate, (a) providing a transparent polyester lenslet-forming layer on a substrate or on layer(s) on the substrate, the polyester containing repeat units, in part, having the structure ##STR1## wherein: n is 2 or greater; x is selected from the group consisting of H, CH.sub.3, Br and Cl; and Z is selected from the group consisting of nil, O, S, CH.sub.2, C.dbd.O, SO, SO.sub.2, CH--CH.sub.3, CH.sub.3 --C--CH.sub.3, CF.sub.3 --C--CF.sub.3, CH.sub.3 --C--CH.sub.2 CH.sub.3, ##STR2## (b) forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning the etch-stop layer to form a mask so that the pattern corresponds to lenslets to be formed; (c) anisotropically plasma etching the transparent lenslet-forming layer according to the pattern; (d) removing the thin etch-stop mask; and (e) thermally reflowing the patterned transparent layer to form the transparent lenslets.