The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Apr. 09, 1997
Applicant:
Inventors:
James B Burr, Foster City, CA (US);
Michael P Brassington, Sunnyvale, CA (US);
Assignee:
Sun Microsystems, Inc., Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257336 ; 257344 ; 257345 ; 257404 ; 257408 ;
Abstract
Low threshold voltage MOS devices having buried electrodes are disclosed herein. Such devices have source and drain regions which include tip regions and plug regions. The buried electrodes have bottom boundaries located above the bottoms of the plug regions. The buried electrode has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. The exact dopant concentrations and locations of the buried electrodes should be provided such that punch through is avoided in MOS devices.