The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Dec. 31, 1996
Louis N Hutter, Richardson, TX (US);
John P Erdeljac, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A DMOS transistor (50) includes an Nwell (70); a Dwell (76) formed in the Nwell (70); a source region (78) formed in the Dwell (78), a channel region (80) defined between an edge of the source region (78) and an edge of the Nwell (70); a gate (86) extending over the channel region (80); and a p+ backgate contact region (90) formed in the source region (78) so as to counterdope and extend through a first portion of the source region (78) to contact the Dwell (76). The formation of the p+ backgate contact region through the source region (78) eliminates the need for a large annular shaped source region resulting in a considerable reduction in both device area and on-resistance.