The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Mar. 16, 1994
Applicant:
Inventors:
Keiji Sato, Koto-ku, Tokyo, JP;
Yutaka Saito, Koto-ku, Tokyo, JP;
Tadao Akamine, Koto-ku, Tokyo, JP;
Junko Yamanaka, Koto-ku, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257186 ; 257438 ; 257463 ; 257464 ; 257627 ;
Abstract
A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.