The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Nov. 03, 1995
Marco Racanelli, Phoenix, AZ (US);
Wen-Ling M Huang, Phoenix, AZ (US);
Bor-Yuan C Hwang, Alpharetta, GA (US);
Juergen A Foerstner, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A two stage threshold adjust implantation process is performed after field oxidation to avoid the effects of dopant redistribution and segregation. At any of several steps in a manufacturing process, only routine implant energy and dose adjustments are required to create a first and a second dopant profile (110, 120) that result in the reduction of edge leakage and threshold voltage sensitivity to device layer thickness of a semiconductor device on a semiconductor on insulator substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile