The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 1998

Filed:

Aug. 21, 1995
Applicant:
Inventors:

Richard W Plavidal, Los Gatos, CA (US);

Shaoher X Pan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156345 ; 31511141 ; 1187 / ; 216 71 ;
Abstract

The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling having an upwardly extending annular pocket bounded by a pair of circumferential side walls, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field having a magnetic pole of one type facing said inner circumferential wall and a magnetic pole of the opposite type facing said outer circumferential wall so as to apply a magnetic field generally straight across said annular pocket. The straight magnetic field lines of the radially symmetrical magnetic field are generally confined to the annular pocket, penetrating into the chamber to a very shallow depth, if at all, and the height of the ceiling above the workpiece exceeds the magnetic field penetration depth.


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