The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1998
Filed:
Apr. 04, 1996
Noriyuki Yoshikawa, Osaka, JP;
Kazuki Tateoka, Osaka, JP;
Akihisa Sugimura, Osaka, JP;
Kunihiko Kanazawa, Kyoto, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an RF matching circuit. A ground layer is formed on the second ceramic substrate, i.e., in a middle layer, thereby preventing the interference of electric signals between circuit components mounted in the respective layers upper and lower than the ground layer. A bias circuit is formed on the top face of the third ceramic substrate, while a back-face ground electrode is formed on the back face of the third ceramic substrate. A leadless electrode is formed over the side faces of the respective ceramic substrates and the back face of the lowermost third ceramic substrate. By utilizing the high heat conductivity and proper dielectric constant of aluminum nitride, the overall RF power amplifying circuit device can be miniaturized at lower cost.