The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1998
Filed:
Jun. 26, 1995
Applicant:
Inventors:
Byeung-Chul Kim, Suwon, KR;
Jung-Dal Choi, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438275 ; 438278 ; 438289 ;
Abstract
A method for manufacturing a mask-ROM comprises a first process of forming a spacer on a side wall of a gate electrode; a second process of eliminating the spacer disposed on the side wall of the gate electrode of an on-cell; and a third process of doping impurity on the entire surface of a semiconductor substrate formed in the preceding process.
Kim, Byeung-Chul. (1998). Method for manufacturing nand type mask-rom having improved cell current (U.S. Patent No. 5716885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5716885
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile