The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1998
Filed:
Jan. 22, 1996
Hirofumi Abe, Tokyo, JP;
NKK Corporation, , JP;
Abstract
A first insulating film for the formation of a gate insulating film is formed on a semiconductor substrate having a memory cell forming region and a peripheral transistor forming region. A first conductive film for the formation of a floating gate is formed on the first insulating film, and a second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film for protecting the second insulating film, and a protective film performing the functions of an oxidation-resistant film, a washing-resistant film and an etching resistant film is formed on the second conductive film. Then, the peripheral transistor region is subjected to a predetermined process. A third conductive film, which will become a control gate of the memory cell and a gate of the peripheral transistor, is formed on the second conductive film and the peripheral transistor forming region subjected to the predetermined process.