The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 1998

Filed:

Mar. 06, 1997
Applicant:
Inventors:

Hiroshi Imoto, Shinagawa-ku, Tokyo, JP;

Atsuo Omaru, Shibuya-ku, Tokyo, JP;

Hideto Azuma, Shinagawa-ku, Tokyo, JP;

Yoshio Nishi, Shinagawa-ku, Tokyo, JP;

Yoshihisa Gonno, Shinagawa-ku, Tokyo, JP;

Masayuki Nagamine, Shibuya-ku, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M / ;
U.S. Cl.
CPC ...
429122 ; 429218 ; 429194 ;
Abstract

An anode material consisting of non-graphitizable carbon material obtained by baking a carbon precursor is disclosed. In this non-graphitizable carbon material, a ratio by weight of carbon Ps in a stacking structure as determined from diffraction peak originating in a (002) crystal lattice plane and X-ray diffraction spectrum components on the lower angle side with respect to the diffraction peak originating in the (002) crystal lattice plane of X-ray diffraction spectrum is smaller than 0.59, or the stacking index SI thereof is smaller than 0.76. Moreover, an average number of carbon layers n.sub.ave in a stacking structure is smaller than 2.46. Alternatively, when the baking temperature is T.degree.C. and the half width at half maximum of the peak appearing in the vicinity of 1340 cm.sup.-1 in the Raman spectrum is HW, the condition expressed below is satisfied.


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