The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Apr. 02, 1996
Jean-Alain Cortiula, Claix, FR;
Thomson-CSF Semiconducteurs Specifiques, Paris, FR;
Abstract
A CCD type charge-transfer photosensitive device (Z1) comprises a photosensitive zone (Z2) formed by at least one line of pixels and designed for the conversion, into electrical charges, of the photons coming from an image and a non-photosensitive zone designed to remove the charges generated in the photosensitive zone and comprising a read register (RL) consisting of transfer stages (ET), the charges generated in a pixel of the photosensitive zone (Z1) being collected in a transfer stage of the read register, wherein the read register (RL) is formed by Q elementary sub-registers Rj (j=1, 2, . . . , Q), each elementary sub-register being formed by a whole number Mj of transfer stages (ET) enabling the transfer of the charges from the first-order stage up to the M order stage, M possibly being different for two different elementary sub-registers, and a read diode located in the M order transfer stage so as convert the variations of charges collected at the terminals of the diode into voltage variations. The disclosure can be applied especially to the photosensitive devices requiring the removal of the charges at a high rate.