Semiconductor memory device and write-once, read-only semiconductor

Abstract

A semiconductor device used as a semiconductor memory device is disclosed which is made of an amorphous silicon material that provides either a '1' or '0' memory state when the amorphous silicon material is in a non-conduction or insulating state and a '0' or '1' memory state when the amorphous silicon material is transformed, by use of a breakdown voltage applied to electrodes coupled thereto, into a conducting state. The amorphous silicon material is located adjacent to a doped semiconductor region of a semiconductor substrate separated only by a relatively thin primarily metal ohmic contact. The resulting semiconductor structure for the semiconductor device or semiconductor memory device is primarily a single level metalization type structure. A write-once, read-only semiconductor memory array is also disclosed which uses, as each memory cell of the array, one of the disclosed semiconductor memory devices. Methods for producing the semiconductor memory device and write-once, read-only semiconductor memory array are also disclosed.