The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Jul. 16, 1996
Applicant:
Inventors:
Tien Sheng Chao, Hsin Chu City, TW;
Horng-Chih Lin, Hsin Chu City, TW;
Assignee:
National Science Council of Republic of China, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 / ; 437160 ; 437192 ; 437193 ;
Abstract
The present invention is to develop a proper new process for deep submicron PMOSFET. The characteristic of this process is using Si:Ge:B layer to deposit on the poly-Si film, then go through oxidation or diffusion method to diffuse the boron ion into the poly-Si gate in order to form p-type poly-Si gate. This layer can be etched selectively after spacer etching and reserve a concave gate structure. Thus, it can combine with selective W-CVD to form an excellent p-type poly-Si PMOSFET.