The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
May. 23, 1996
Applicant:
Inventor:
Byeung-chul Kim, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566441 ; 15665911 ; 216 41 ; 437189 ; 437195 ;
Abstract
A method of forming a contact hole through an interlayer insulation layer in a semiconductor device using a sidewall spacer formed on the sidewalls of a pattern hole in a photosensitive film which serves as a mask to an anisotropic etching process used to form the contact hole.
Kim, Byeung-chul. (1998). Method for forming contact hole of semiconductor device (U.S. Patent No. 5714038). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5714038
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