The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1998
Filed:
Jun. 30, 1992
Mordehai Heiblum, Yorktown Heights, NY (US);
Alexander Palevski, Ossining, NY (US);
Corwin Paul Umbach, Katonah, NY (US);
IBM Corporation, Armonk, NY (US);
Abstract
A lateral THETA device formed of a sandwich of first and second layers of semiconductor material forming a heterojunction therebetween and a two dimensional carrier gas in the second layer. First and second spaced electrodes are disposed on the surface of the first layer for inducing first and second potential barriers to the flow of charge carriers in the carrier gas. Ohmic contacts are deposited in the base region defined between the electrodes and in the emitter and collector regions defined on opposing sides of the electrodes. The width of the first electrode is formed narrow enough so that the first potential barrier beneath the electrode permits tunnelling of charge carriers into the base region. The width of the second electrode is wide enough so that the second potential barrier prevents tunnelling. Electrons tunnelling through the first barrier are hot and ballistically move through the base region to the collector.