The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1998
Filed:
Jun. 06, 1996
Masato Kanazawa, Kyoto, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes and is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. A second interlayer dielectric film layer is formed on the first conductive film layer and is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and a upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed to form second connection holes. A second conductive film layer is formed thereon and is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.