The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1998
Filed:
Jul. 29, 1996
Motorola, Schaumburg, IL (US);
Abstract
A FET including a channel region and a drift region in a channel layer with a source in the channel region and a drain in the drift region. The current channel between the source and drain defining a straight transistor portion and a curved transistor portion. An oxide with a thin portion overlying the channel region and a thick portion overlying the drift region, and a gate on the thin oxide overlying the current channel. A drain field plate and a gate field plate on the thick oxide with spaced apart edges and a damaged region underlying the edges of the field plates only in the curved transistor portion to reduce electric fields at the edges of the field plates. Also, the current channel has a greater length and the edges are spaced apart farther in the curved transistor portions.