The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1998
Filed:
Apr. 10, 1996
Steven L Merchant, Phoenix, AZ (US);
Philips Electronics North America Corporation, New York, NY (US);
Abstract
A Semiconductor-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate, and a lateral MOSFET on the buried insulating layer. The MOSFET includes a semiconductor surface layer on the buried insulating layer and has a source region of a first conductivity type, a channel region of a second conductivity type opposite to that of the first, an insulated gate electrode over the channel region and insulated therefrom, a lateral drift region of the second conductivity type, and a drain region of the first conductivity type laterally spaced apart from the channel region by the drift region. A semiconductor linkup region of the first conductivity type is provided between the channel region and the drift region and extends substantially through the semiconductor surface layer, and the source region of the device is electrically coupled to the drift region. This device configuration is particularly useful in providing a high-voltage p-channel MOS transistor using thin SOI high-voltage technology normally associated with fabricating n-channel devices.