The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1998
Filed:
Oct. 27, 1995
Shigeru Tohyama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impurity region which is selectively formed on the surface of a P(or N)-type semiconductor region at the surface of a semiconductor substrate, a CCD register for executing electronic scanning which is disposed in parallel to the row of photosensitive devices, and a read-out gate in which a signal charge is transferred from the photosensitive device to the CCD register, wherein a transparent Schottky electrode is formed on the first N(or P)-type impurity region except a portion adjacent to the read-out gate region, the Schottky electrode is electrically connected to a P.sup.+ (or N.sup.+)-type element separating region which surrounds the first N(or P)-type impurity region and has a Schottky barrier that is determined such that a diffusion potential between the Schottky electrode and the first N(or P)-type impurity region is lower than a diffusion potential between the first N(or P)-type impurity region and the P(or N)-type semiconductor region.