The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1998
Filed:
Jan. 22, 1996
Applicant:
Inventors:
Atsuo Watanabe, Hitachiohta, JP;
Katsuaki Saito, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01W / ; H01L / ;
U.S. Cl.
CPC ...
257107 ; 257109 ; 257165 ; 257171 ; 257169 ;
Abstract
A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating region. Since the blocking-voltage and the current-carrying capacity can be adjusted independently from each other, the blocking voltage and the current-carrying capacity can be both improved.
Watanabe, Atsuo. (1998). Semiconductor device and method of manufacturing same (U.S. Patent No. 5710442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5710442
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