The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1998
Filed:
Aug. 08, 1996
Electronics and Telecommunications Research Institute, Daejeon-shi, KR;
Abstract
A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an electron tunneling barrier on right and left of the Au cluster in the two dimensional island structure; and joining a gate on bottom of the silicon-substrate.