The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Sep. 05, 1996
Fumihiro Ryoho, Tokyo, JP;
Hiroaki Kanno, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Electric Engineering Co., Ltd., Tokyo, JP;
Abstract
A semiconductor memory device with low current consumption is disclosed. A bit line selecting circuit (3) establishes electrical connection between a bit line (BL) selected during a read period and a node (N2) in response to bit line connection/selection signals (SB0 to SB4). A charge-up circuit (7) includes PMOS transistors (Q29, Q30). The PMOS transistor (Q29) has a source connected to a power supply (V.sub.DD), a drain connected to a drain of a transistor (Q10) of the bit line selecting circuit (3), and a gate receiving a read control signal (SC). The PMOS transistor (Q30) has a source connected to the power supply (V.sub.DD), a drain connected to the drain of the transistor (Q10) of the bit line selecting circuit (3), and a gate fixed at a ground level.