The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Nov. 02, 1995
Applicant:
Inventors:
John H Quigley, Phoenix, AZ (US);
Jeremy C Smith, Austin, TX (US);
Percy Gilbert, Austin, TX (US);
Shih Wei Sun, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257355 ; 257347 ; 257350 ; 437-6 ;
Abstract
A thin film silicon on insulator circuit with a low voltage triggered, surface silicon controlled rectifier (30) for electrostatic damage protection and method is provided. A surface silicon controller rectifier (30) is formed in a thin device layer (130), overlying a buried insulation layer (110) and electrically coupled to a low voltage trigger apparatus (36). In one embodiment, a zener diode is employed as the low voltage trigger apparatus (36), and in another embodiment low voltage trigger apparatus (36) is an n-channel MOSFET.