The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Jul. 29, 1996
Applicant:
Inventors:
Jaeshin Cho, Chandler, AZ (US);
Naresh Saha, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438595 ; 438624 ; 438637 ; 438722 ; 438740 ; 438970 ;
Abstract
An etch stop layer prevents damage to the underlying semiconductor material or metallization layer during etching of a dielectric layer overlying the etch stop layer. The etch stop layer, aluminum nitride or aluminum oxide is used underlying silicon dioxide to prevent damage to the semiconductor material during a fluorocarbon based etch of the silicon dioxide. The etch stop layer is also used underlying a silicon dioxide layer and overlying a titanium nitride or titanium tungsten layer used in metallization to prevent etching of the titanium nitride or titanium tungsten layer during etching of the silicon dioxide.