The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 1998

Filed:

Mar. 24, 1995
Applicant:
Inventors:

Jean-Yves Emery, Paris, FR;

Leon Goldstein, Chaville, FR;

Assignee:

Alcatel N.V., Rijswijk, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437110 ; 437129 ; 437160 ; 437161 ;
Abstract

From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.


Find Patent Forward Citations

Loading…