The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Dec. 26, 1995
Tsu-Jae King, Cupertino, CA (US);
Jackson H Ho, Palo Alto, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A new polycrystalline silicon film which has been crystallized using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to 'seed' crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile