The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Jan. 17, 1997
Applicant:
Inventors:
Thomas Hsiao-Ling Hsiung, Emmaus, PA (US);
Zbigniew Tadeusz Fidkowski, Macungie, PA (US);
Rakesh Agrawal, Emmaus, PA (US);
Assignee:
Air Products and Chemicals, Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F25J / ;
U.S. Cl.
CPC ...
62632 ; 62636 ; 62924 ;
Abstract
The present invention is directed to two embodiments of a process for recycling an impure argon effluent from a silicon crystal growing furnace using cryogenics. The first embodiment uses cryogenic distillation techniques, and the second embodiment uses cryogenic adsorption, both of which use catalytic treatments and adsorption in conjunction with their cryogenic process steps to provide a pure argon recycle stream for a silicon crystal growth furnace.