The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 1998

Filed:

Dec. 19, 1994
Applicant:
Inventors:

Takeshi Ikeda, Tokyo, JP;

Akira Okamoto, Ageo, JP;

Assignee:

T.I.F. Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04H / ; H01L / ;
U.S. Cl.
CPC ...
333184 ; 333185 ; 257531 ;
Abstract

An LC element for use with a semiconductor device features excellent attenuation characteristics. The element includes a pn junction that has a predetermined shape and which is formed near the surface of a semiconductor substrate. The predetermined shapes include a spiral shape, a meander shape, a straight shape, and a curved shape. An inductor electrode is formed on the pn junction, and the pn junction is reverse biased with a specified voltage to form a distributed capacitor having a desired capacitance. One of the p and n layers functions as an inductor. The element is easily manufactured and requires minimal assembly, and may also be integrally formed as part of an IC or LSI device.


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