The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Dec. 05, 1996
Takuo Kashiwa, Tokyo, JP;
Makio Komaru, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate on which are successively disposed, a semiconductor laminated layer structure including at least two semiconductor layers, a first semiconductor layer containing a first dopant impurity providing a first conductivity type, and a second semiconductor layer containing the first dopant impurity in a concentration higher than in the first semiconductor layer. A semiconductor diode includes a first electrode in ohmic contact with the second semiconductor layer, and a second electrode in Schottky contact with the second semiconductor layers. A transistor includes a gate electrode in the recess and making a Schottky contact with the first semiconductor layer, and a source electrode and a drain electrode disposed on opposite sides of the recess on the second semiconductor layer, and in ohmic contact with the second semiconductor layer. The region in the diode where the depletion layer extends is broadened, and the capacitance of the diode varies linearly and is controllable over a wide range.