The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Nov. 24, 1995
Akira Nishiura, Kawasaki, JP;
Masahito Otsuki, Kawasaki, JP;
Fuji Electric Co., Ltd., Kanagawa, JP;
Abstract
A second region 3 is formed via a buffer layer 3a on a first region 2 formed with an anode electrode 1 on the rear and a third region 4 like a well is formed on the surface of the second region 3. A fourth region 15 like a well is formed at the center on the surface of the third region 4 and a fifth region 16 is formed along the well end. A sixth region 17 like a well is formed on the surface of the fourth region 15. Cathode electrodes 18 as metal electrodes of the first layer come in conductive contact with the fifth region 16 and the sixth region 17. A MOSFET 12 of n channel type for injecting majority carriers (electrons) is disposed from the first region 16 to the surfaces of the third region 4 and the second region 3, and a MOSFET 23 of p channel type is disposed from the sixth region 17 to the surfaces of the fourth region 16 and the third region 4. The second MOSFET 23 has a double diffusion type structure.