The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Jun. 27, 1995
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 40 ; 257 59 ; 257 72 ; 349 43 ;
Abstract
A field-effect transistor using a conjugated oligomer having an ionization potential of 4.8 eV or above in the semiconductor layer thereof works stably and has a long life-time and can be used in a liquid crystal display device as a switching element to give excellent contrast and good performances.
Quick Actions:
Aratani, Sukekazu. (1998). Field-effect transistor having a semiconductor layer made of an organic (U.S. Patent No. 5705826). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5705826
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile