The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Apr. 19, 1996
Catherine Ronge, Paris, FR;
Fabrice Bounaix, Luneville, FR;
Patrick Mauvais, Villepreux, FR;
Frederic Stoeckel, Saint Martin d'Heres, FR;
Abstract
The invention relates to a process for analyzing traces of at least one impurity in a gas sample, by absorption by the impurity to be detected of a light beam emitted by a semiconductor diode laser, the beam emitted by the diode being split into at least two branched beams, one called the measurement beam which passes through the gas sample to be analyzed in a multipassage cell before being focused onto a measurement photodetector, another branched beam, called the reference beam, being along a reference path and directly focused onto a reference photodetector without encountering the gas sample, in which process the gas sample is at a pressure at least equal to atmospheric pressure, and a modulation of the supply current of the diode has been introduced, which comprises at least one function of the exponential type.