The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Feb. 11, 1997
Jong Oh Kim, Seoul, KR;
Sung Rae Kim, Ichon, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki-do, KR;
Abstract
This invention discloses a method of manufacturing a flash EEPROM cell having a split gate structure in which source and drain regions are formed by self align method without using of an additional mask. Problems caused by that length of control gates in each cell are different from each other due to the misalignment between a mask for forming the control gate and a mask for forming source and drain regions are solved since source and drain regions are formed by self align method without using of an additional mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile