The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Dec. 23, 1996
Applicant:
Inventor:
Bernhard Lustig, Munchen, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 / ; 437 / ; 437 / ; 437 / ; 4372 / ;
Abstract
A gate electrode for an MOS structure, such as a short-channel MOS transistor, is produced. First, a hard mask is created, using a spacer of the material of the gate electrode as the etching mask, and the hard mask is used to structure the gate electrode. The method is suitable particularly for the production of gate electrodes with very thin gate dielectrics with channel lengths below 100 nm.