The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Oct. 04, 1995
Ralf Dietrich, Munchen, DE;
Gerhard Franz, Munchen, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for dry etching of a semiconductor substrate includes producing convex structures on a surface of a semiconductor wafer by using a suitable masking and a suitable etchant. A thick photoresist layer is applied to a semiconductor wafer and structured. The structured photoresist layer is liquified by the influence of temperature to produce a spherical structure and is then hardened as an etchable masking. The semiconductor wafer structured with the photoresist layer is etched in plasma at etching speeds being similar for the semiconductor material and the photoresist, for transferring a convex structure of the photoresist layer to the semiconductor wafer, during etching down of the photoresist layer.