The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 1997

Filed:

Dec. 08, 1995
Applicant:
Inventor:

Ichiro Ogura, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ; H01L / ;
U.S. Cl.
CPC ...
372 96 ; 372 99 ; 372 45 ; 372 46 ; 437129 ;
Abstract

A surface emission laser is formed by sequentially stacking an n-type semiconductor multilayer reflector, an n-type clad layer, an active layer, a p-type clad layer, and a p-type semiconductor multilayer reflector on a semiconductor substrate. The p-type semiconductor multilayer reflector is etched to form a mesa. An electrode is formed on at least on the mesa side surfaces and a portion of the mesa bottom surface. The thickness of a GaAs film as the mesa bottom surface of the p-type semiconductor multilayer reflector to which an etching process is stopped is set to be (1/4+n/2, where n is an integer) times the oscillation wavelength. A method of manufacturing the surface emission laser is also disclosed.


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