The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Sep. 10, 1996
David F Welch, Palo Alto, CA (US);
David G Mehuys, Menlo Park, CA (US);
Donald R Scifres, San Jose, CA (US);
SDL, Inc., San Jose, CA (US);
Abstract
A semiconductor laser having a light amplifying diode heterostructure body having a single spatial mode aperture region or waveguide and a flared or tapered gain region having a narrow input end and wider output end provided in a resonant cavity, a portion of which cavity may be external of the body. The flared gain region has a narrow aperture end and a wide output end with narrow aperture end optically coupled to a single mode waveguide. A saturable aborbing region is formed as part of the single mode waveguide region and not between it and the flared gain section, and is reverse biased to provide for mode locked operation. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts, and the flared gain region may be divided into one or more flared gain sections which may be differentially or separately pumped.