The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Dec. 29, 1995
Applicant:
Inventors:
Seung-Moon Yoo, Suwon, KR;
Jei-Hwon Yoo, Suwon, KR;
Assignee:
Samsung Electronocs Co., Ltd., Suwon, KR;
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518905 ; 36518911 ; 327321 ; 326 62 ;
Abstract
A voltage detection unit between a data output buffer terminal and the gate a transistor which is used to dissipate a high level voltage on the internal data line. The detection unit thus prevents an undesired electrical path from existing in the data output buffer circuit. In one embodiment, the detection unit consists of an NMOS and PMOS transistor connected in series and having a shared node connected to the voltage dissipating transistor. In another embodiment, there is also connected an invertor between the shared node and the gates of the NMOS and PMOS transistors.