The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
May. 14, 1996
Applicant:
Inventor:
Heinrich Brunner, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257139 ; 257262 ; 257263 ; 257273 ; 257330 ; 257331 ; 257332 ; 257333 ; 257342 ; 257376 ; 257378 ; 257517 ; 257526 ;
Abstract
In IGBTs or, respectively, MOSFETs a parasitic junction-FET effect can be nearly avoided on the basis of an insulation layer introduced between the two base zones and into which an electrode is additionally embedded. The on-resistance is lowered as a result thereof. In an advantageous development, a potential activation of the parasitic bipolar structure (latch-up) can also be prevented.