The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Apr. 08, 1996
Kazuya Nakayama, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A power semiconductor device comprises a plurality of IGBT's, and gate electrodes and source electrodes are alternately arranged. In two adjacent IGBT's, the gate electrode is positioned between two source electrodes, and in the next two adjacent IGBT's, the source electrode is positioned between two gate electrodes. The power semiconductor device is designed to meet conditions of 60 .mu.m.ltoreq.L.sub.G, 5.ltoreq.L.sub.G /L.sub.S, and 1.ltoreq.L.sub.G.sup.2 /(D.sub.B .multidot.W.sub.B).ltoreq.9, where L.sub.G denotes the width of the gate electrode, D.sub.B denotes the depth of the base layer of the first conductivity type, W.sub.B denotes the thickness of that portion of the base layer of the second conductivity type which is sandwiched between the base layer of the first conductivity type and the emitter layer of the first conductivity type, and L.sub.S denotes the distance between these gate electrodes.
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