The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Feb. 26, 1996
Applicant:
Inventors:
Cheng P Wen, Mission Viejo, CA (US);
Randy K Rolph, Palos Verdes Estates, CA (US);
Timothy T Zielinski, Torrance, CA (US);
Assignee:
Hughes Aircraft Company, Los Angeles, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118730 ; 118715 ; 118726 ;
Abstract
Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.